[논문 읽기] 3D DRAM 2T0C IGZO TFT
[논문 읽기] 3D DRAM 2T0C IGZO TFT 행복-금으로 ski resort에서 하루를 잘 보내고, 다음날 소식을 파악하다가 눈에 띄는 소식을 만났습니다. 중국 연구팀이 3D DRAM 성과를 내놓았네요. Tom’s Hardware에서 Anton Shinov가 소식을 전합니다. Chinese researchers hail breakthrough in DRAM-like cells, which could be used in embedded or 3D stacked memory — absence of manufacturing detail casts doubt on mass production | Tom's Hardware Tom's의 Premium 기사인데, 공개된 부분만으로도 중요한 정보를 얻을 수 있습니다. TrendForce에서 먼저 다루었네요. https://www.trendforce.com/news/2026/01/02/news-chinese-semiconductor-research-achieves-multiple-breakthroughs-in-memory-and-ic-design/ [News] Chinese Semiconductor Research Achieves Multiple Breakthroughs in Memory and IC Design 2026-01-02 (발췌) IME CAS Achieved Major Progress in High-Density 3D DRAM Research A research team from the National Key Laboratory of Integrated Circuit Manufacturing Technology at the Institute of Microelectronics of Chinese Academy of Sciences (IME C...